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| TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. 94 8390 Features * High modulation bandwidth (23 MHz) * Extra high radiant power and radiant intensity e2 * Low forward voltage * Suitable for high pulse current operation * Standard T-13/4 ( 5 mm) package * Angle of half intensity = 10 * Peak wavelength p = 870 nm * High reliability * Good spectral matching to Si photodetectors * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications * Infrared video data transmission between Camcorder and TV set. * Free air data transmission systems with high modulation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 250 100 - 40 to + 85 - 40 to + 100 260 300 Unit V mA mA A mW C C C C K/W Document Number 81090 Rev. 1.5, 28-Nov-06 www.vishay.com 1 TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF VF TKVF IR Cj 125 Min Typ. 1.5 2.3 - 2.1 10 Max 1.8 3.0 Unit V V mV/K A pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Radiant intensity Radiant power Temp. coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of p Rise time Fall time Cut-off frequency Virtual source diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Symbol Ie Ie e TKe p TKp tr tf fc Min 90 Typ. 180 1800 50 - 0.35 10 870 40 0.25 15 15 23 3.7 Max 450 Unit mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm Typical Characteristics Tamb = 25 C, unless otherwise specified 300 PV - Power Dissipation (mW) 250 200 RthJA 150 100 50 0 0 16647 200 175 IF - Forward Current (mA) 150 125 100 75 50 25 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) 0 16964 RthJA 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 81090 Rev. 1.5, 28-Nov-06 TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb < 50 1.25 1.0 IF - Forward Current (mA) 0.05 0.1 0.75 0.5 0.2 0.5 0.25 0 780 100 0.01 16031 0.1 1.0 10 100 880 - Wavelength (nm) 980 tP - Pulse Duration (ms) 95 9886 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Relative Radiant Power vs. Wavelength 0 1000 Ie rel - Relative Radiant Intensity 10 20 30 IF - Forward Current (mA) 100 tP = 100 s tP/T = 0.001 10 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 15989 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) e, I e - Attenuation (dB) 1 0 100 -1 -2 -3 -4 -5 10 IFDC = 70 mA IFAC = 30 mA pp 10 1 0.1 1 16032 10 100 1000 100 1000 10000 100000 IF - Forward Current (mA) 14256 f - Frequency (kHz) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Attenuation vs. Frequency Document Number 81090 Rev. 1.5, 28-Nov-06 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number 81090 Rev. 1.5, 28-Nov-06 TSFF5210 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81090 Rev. 1.5, 28-Nov-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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